inchange semiconductor isc product specification isc silicon npn power transistors buv26f/af description collector-emitter sustaining voltage- : v ceo(sus) = 90v(min)- buv26f 100v(min)- BUV26AF high switching speed applications designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. absolute maximum ratings(t a =25 ) symbol parameter value unit buv26f 180 v ces collector-emitter voltage v be = 0 BUV26AF 200 v buv26f 90 v ceo collector-emitter voltage BUV26AF 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 14 a i cm collector current-peak 25 a i b b base current-continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25 18 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 7.0 /w r th j-a thermal resistance, junction to ambient 55 /w isc website www.iscsemi.cn www.datasheet.net/ datasheet pdf - http://www..co.kr/
inchange semiconductor isc product specification isc silicon npn power transistors buv26f/af electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit buv26f 90 v ceo(sus) collector-emitter sustaining voltage BUV26AF i c = 0.2a ;i b = 0; l= 25mh b 100 v buv26f i c = 12a; i b = 1.2a 1.5 v ce(sat)-1 collector-emitter saturation voltage BUV26AF i c = 10a; i b = 1.0a 1.0 v buv26f i c = 6a; i b = 0.6a b 0.6 v ce(sat)-2 collector-emitter saturation voltage BUV26AF i c = 5a; i b = 0.5a b 0.5 v buv26f i c = 12a; i b = 1.2a 2.0 v be(sat)-1 base-emitter saturation voltage BUV26AF i c = 10a; i b = 1.0a 1.5 v buv26f i c = 6a; i b = 0.6a b 1.2 v be(sat)-2 base-emitter saturation voltage BUV26AF i c = 5a; i b = 0.5a b 1.2 v i cex collector cutoff current v ce =v cesmax ;v be =-1.5v,t j =125 1.0 ma i ces collector cutoff current v ce =v cesmax ;v be =0,t j =125 3.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 1.0 ma switching times; resistive load t on turn-on time 0.4 0.6 s t stg storage time 0.45 1.0 s t f fall time for buv26f i c = 12a; i b1 = 1.2a; i b2 = -2.4a for BUV26AF i c = 10a; i b1 = 1.0a; i b2 = -2.0a 0.12 0.25 s isc website www.iscsemi.cn 2 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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